fig3

Figure 3. SEM images of (A) 10 μm and (B) 200 nm of 1% TAC, (C) 10 μm and (D) 200 nm of 0% TAC; SEM images of Zn anode in Zn||Zn symmetry cells after 700 h plating/stripping cycles in ZnSO₄ using (E) 10 μm and (F) 500 nm of 1% TAC, (G) 10 μm and (H) 500 nm of 0% TAC at 0.5 mA cm^-2; (I) Galvanostatic Zn stripping and plating in a Zn||Zn cell using TAC with 2 M ZnSO₄ as the electrolyte under current density of 0.5 mA cm^-2 with 1 mAh cm^-2 capacity limitation; Potential profiles of Zn||Zn cell plating/stripping cycles using 1% TAC at (J) the first, (K) the 100th, (L) 200th, (M) 400th, (N) 500th with 1 mAh cm^-2 capacity limitation.